| Número de pieza | KBU3506-G |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Single Phase |
| Tecnología | Standard |
| Voltaje - Pico Inverso (Máx) | 600V |
| Corriente - promedio rectificado (Io) | 4.2A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.1V @ 17.5A |
| Current - Reverse Leakage @ Vr | 10µA @ 600V |
| Temperatura de funcionamiento | -55°C ~ 125°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete / caja | 4-SIP, KBU |
| Paquete de dispositivo del proveedor | KBU |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
 |
KBU10005 | GeneSiC Semiconductor | DIODE BRIDGE 50V 10A KBU | Detalles |
 |
KBU10005-G | Comchip Technology | RECT BRIDGE CELL 50V 10A KBU | Detalles |
|
KBU1001 | GeneSiC Semiconductor | DIODE BRIDGE 100V 10A KBU | Detalles |
|
KBU1001-G | Comchip Technology | RECTIFIER BRIDGE 10A 100V KBU | Detalles |
 |
KBU1001G | TSC | Single Phase 10 AMPS. Glass Passivated Bridge Rectifiers | Detalles |
 |
KBU1001G T0 | Taiwan Semiconductor Corporation | BRIDGE RECT 1PHASE 50V 10A KBU | Detalles |
|
KBU1001G T0G | Taiwan Semiconductor Corporation | BRIDGE RECT 1PHASE 50V 10A KBU | Detalles |
|
KBU1001G_1 | TSC | Single Phase 10 AMPS. Glass Passivated Bridge Rectifiers | Detalles |
|
KBU1001_09 | TSC | Single Phase 10.0 AMPS. Bridge Rectifiers | Detalles |
|
KBU1001_1 | TSC | Single Phase 10 AMPS. Silicon Bridge Rectifiers | Detalles |
