| Número de pieza | 2N5116 |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | P-Channel |
| Voltaje - avería (V (BR) GSS) | 30V |
| Drene a la fuente de voltaje (Vdss) | - |
| Current - Drain (Idss) @ Vds (Vgs = 0) | 5mA @ 15V |
| Drenaje actual (Id) - Max | - |
| Voltaje - Corte (VGS apagado) @ Id | 1V @ 1nA |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 25pF @ 15V |
| Resistencia - RDS (Encendido) | 150 Ohm |
| Potencia - Max | 500mW |
| Temperatura de funcionamiento | -65°C ~ 200°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete / caja | TO-206AA, TO-18-3 Metal Can |
| Paquete de dispositivo del proveedor | TO-18 |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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2N0303 | INFINEON | 2N0303 INFINEON TO-220 New Original Stocks | Detalles |
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2N03L10 | INFINEON | 2N03L10 INFINEON TO-251 New Original Stocks | Detalles |
|
2N1008 | EXSHINE | alloy-junction germanium transistors | Detalles |
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2N1008A | EXSHINE | alloy-junction germanium transistors | Detalles |
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2N1008B | EXSHINE | alloy-junction germanium transistors | Detalles |
|
2N1011 | EXSHINE | germanium transistors | Detalles |
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2N1016B | Microsemi Corporation | NPN TRANSISTOR | Detalles |
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2N1016C | Microsemi Corporation | NPN TRANSISTOR | Detalles |
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2N1016D | Microsemi Corporation | NPN TRANSISTOR | Detalles |
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2N1057 | EXSHINE | alloy-junction germanium transistors | Detalles |
