VS-GT300YH120N

VS-GT300YH120N - Vishay Semiconductor Diodes Division

Part Number
VS-GT300YH120N
Manufacturer
Vishay Semiconductor Diodes Division
Brief Description
IGBT 1200V 341A 1042W DIAP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
VS-GT300YH120N PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Modules
Delivery Time
1 Day
Date Code
New
Stock Quantity
157 pcs
Reference Price
USD 171.4625/pcs
Our Price
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VS-GT300YH120N Detailed Description

Part Number VS-GT300YH120N
Part Status Active
IGBT Type Trench
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 341A
Power - Max 1042W
Vce(on) (Max) @ Vge, Ic 2.17V @ 15V, 300A (Typ)
Current - Collector Cutoff (Max) 300µA
Input Capacitance (Cies) @ Vce 36nF @ 30V
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Double INT-A-PAK (3 + 8)
Supplier Device Package Double INT-A-PAK
Weight -
Country of Origin -

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