VS-GB150YG120NT - Vishay Semiconductor Diodes Division

Part Number	VS-GB150YG120NT
Part Status	Active
IGBT Type	NPT
Configuration	Full Bridge
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	182A
Power - Max	892W
Vce(on) (Max) @ Vge, Ic	4V @ 15V, 200A
Current - Collector Cutoff (Max)	120µA
Input Capacitance (Cies) @ Vce	-
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	ECONO3 4PACK
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
VS-GB05XP120KTPBF	Vishay Semiconductor Diodes Division	MODULE MTP SWITCH	Details
VS-GB100DA60UP	Vishay Semiconductor Diodes Division	MODULE IGBT SOT-227	Details
VS-GB100LH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 833W INT-A-PAK	Details
VS-GB100LP120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 658W INT-A-PAK	Details
VS-GB100NH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 833W INT-A-PAK	Details
VS-GB100TH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 833W INT-A-PAK	Details
VS-GB100TH120U	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 1136W INT-A-PAK	Details
VS-GB100TP120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 650W INT-A-PAK	Details
VS-GB100TP120U	Vishay Semiconductor Diodes Division	IGBT 1200V 150A 735W INT-A-PAK	Details
VS-GB100TS60NPBF	Vishay Semiconductor Diodes Division	IGBT 600V 108A 390W INT-A-PAK	Details