SQM120N04-1M7_GE3

SQM120N04-1M7_GE3 - Vishay Siliconix

Part Number
SQM120N04-1M7_GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 40V 120A TO263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SQM120N04-1M7_GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
13679 pcs
Reference Price
USD 1.8625/pcs
Our Price
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SQM120N04-1M7_GE3 Detailed Description

Part Number SQM120N04-1M7_GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 310nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 17350pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Rds On (Max) @ Id, Vgs 1.7 mOhm @ 30A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

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