SQM120N04-1M7L_GE3 - Vishay Siliconix

Part Number	SQM120N04-1M7L_GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	285nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	14606pF @ 20V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Rds On (Max) @ Id, Vgs	1.7 mOhm @ 30A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SQM120N02-1M3L_GE3	Vishay Siliconix	MOSFET N-CH 20V 120A TO263	Details
SQM120N03-1M5L_GE3	Vishay Siliconix	MOSFET N-CH 30V 120A TO-263	Details
SQM120N04-1M4L_GE3	Vishay Siliconix	N-CHANNEL 40-V D-S 175C MOSFET	Details
SQM120N04-1M7L_GE3	Vishay Siliconix	MOSFET N-CH 40V 120A TO263	Details
SQM120N04-1M7_GE3	Vishay Siliconix	MOSFET N-CH 40V 120A TO263	Details
SQM120N04-1M9_GE3	Vishay Siliconix	MOSFET N-CH 40V 120A TO263	Details
SQM120N06-06_GE3	Vishay Siliconix	MOSFET N-CH 60V 120A TO263	Details
SQM120N06-3M5L_GE3	Vishay Siliconix	MOSFET N-CH 60V 120A TO-220	Details
SQM120N10-09_GE3	Vishay Siliconix	MOSFET N-CH 100V 120A TO263	Details
SQM120N10-3M8_GE3	Vishay Siliconix	MOSFET N-CH 100V 120A TO263	Details