SQJA70EP-T1_GE3 - Vishay Siliconix

Part Number	SQJA70EP-T1_GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	14.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	95 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	220pF @ 25V
FET Feature	-
Power Dissipation (Max)	27W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SQJA70EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 100V 14.7A SO-8	Details
SQJA72EP-T1_GE3	Vishay Siliconix	MOSFET N-CHAN 100V POWERPAK SO-8	Details
SQJA76EP-T1_GE3	Vishay Siliconix	MOSFET N-CHAN 40V POWERPAK SO-8L	Details