SQ3419AEEV-T1_GE3 - Vishay Siliconix

Part Number	SQ3419AEEV-T1_GE3
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	6.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	61 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12.5nC @ 4.5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	975pF @ 20V
FET Feature	-
Power Dissipation (Max)	5W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SQ3419AEEV-T1_GE3	Vishay Siliconix	MOSFET P-CHANNEL 40V 6.9A 6TSOP	Details
SQ3419EEV-T1-GE3	Vishay Siliconix	MOSFET P-CH 40V 7.4A 6TSOP	Details
SQ3419EV-T1_GE3	Vishay Siliconix	MOSFET P-CH 40V 7.4A 6TSOP	Details