SQ3419AEEV-T1_GE3 Detailed Description
| Part Number |
SQ3419AEEV-T1_GE3 |
| Part Status |
Active |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
40V |
| Current - Continuous Drain (Id) @ 25°C |
6.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Rds On (Max) @ Id, Vgs |
61 mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
12.5nC @ 4.5V |
| Vgs (Max) |
±12V |
| Input Capacitance (Ciss) (Max) @ Vds |
975pF @ 20V |
| FET Feature |
- |
| Power Dissipation (Max) |
5W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
6-TSOP |
| Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
| Weight |
- |
| Country of Origin |
- |
RELATED PRODUCTS FOR SQ3419AEEV-T1_GE3
