SIHB35N60EF-GE3 - Vishay Siliconix

Part Number	SIHB35N60EF-GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	97 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	134nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2568pF @ 100V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SIHB30N60AEL-GE3	Vishay Siliconix	MOSFET N-CHAN 600V D2PAK	Details
SIHB30N60E-E3	Vishay Siliconix	MOSFET N-CH 600V 29A D2PAK	Details
SIHB30N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 29A D2PAK	Details
SIHB33N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 33A TO-263	Details
SIHB33N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 33A TO-263	Details
SIHB33N60ET1-GE3	Vishay Siliconix	MOSFET N-CH 600V 33A TO263	Details
SIHB33N60ET5-GE3	Vishay Siliconix	MOSFET N-CH 600V 33A TO263	Details
SIHB35N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 32A D2PAK TO263	Details
SIHB35N60EF-GE3	Vishay Siliconix	MOSFET N-CH D2PAK TO-263	Details