| Part Number | SIHB35N60E-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 132nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2760pF @ 100V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Rds On (Max) @ Id, Vgs | 94 mOhm @ 17A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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SIHB30N60AEL-GE3 | Vishay Siliconix | MOSFET N-CHAN 600V D2PAK | Details |
|
SIHB30N60E-E3 | Vishay Siliconix | MOSFET N-CH 600V 29A D2PAK | Details |
|
SIHB30N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 29A D2PAK | Details |
|
SIHB33N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 33A TO-263 | Details |
|
SIHB33N60EF-GE3 | Vishay Siliconix | MOSFET N-CH 600V 33A TO-263 | Details |
 |
SIHB33N60ET1-GE3 | Vishay Siliconix | MOSFET N-CH 600V 33A TO263 | Details |
|
SIHB33N60ET5-GE3 | Vishay Siliconix | MOSFET N-CH 600V 33A TO263 | Details |
|
SIHB35N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 32A D2PAK TO263 | Details |
|
SIHB35N60EF-GE3 | Vishay Siliconix | MOSFET N-CH D2PAK TO-263 | Details |
