| Part Number | SIA440DJ-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V, 10V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 20V |
| Vgs (Max) | ±12V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Rds On (Max) @ Id, Vgs | 26 mOhm @ 9A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SC-70-6 Single |
| Package / Case | PowerPAK® SC-70-6 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
SIA440DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 12A SC-70 | Details |
|
SIA441DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 12A SC-70 | Details |
|
SIA443DJ-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 9A SC70-6 | Details |
|
SIA443DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 9A SC70-6 | Details |
|
SIA444DJT-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 12A SC-70 | Details |
 |
SIA444DJT-T4-GE3 | Vishay Siliconix | MOSFET N-CH 30V SMD | Details |
|
SIA445EDJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC-70 | Details |
|
SIA445EDJT-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC70-6 | Details |
|
SIA446DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 150V 7.7A SC70-6L | Details |
|
SIA447DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V 12A SC-70-6L | Details |
