| Part Number | SIA447DJ-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V, 4.5V |
| Vgs(th) (Max) @ Id | 850mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 2880pF @ 6V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 7A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SC-70-6 Single |
| Package / Case | PowerPAK® SC-70-6 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
SIA440DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 12A SC-70 | Details |
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SIA441DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 12A SC-70 | Details |
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SIA443DJ-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 9A SC70-6 | Details |
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SIA443DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 9A SC70-6 | Details |
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SIA444DJT-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 12A SC-70 | Details |
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SIA444DJT-T4-GE3 | Vishay Siliconix | MOSFET N-CH 30V SMD | Details |
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SIA445EDJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC-70 | Details |
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SIA445EDJT-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC70-6 | Details |
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SIA446DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 150V 7.7A SC70-6L | Details |
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SIA447DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V 12A SC-70-6L | Details |
