SIA445EDJT-T1-GE3 Detailed Description
| Part Number |
SIA445EDJT-T1-GE3 |
| Part Status |
Active |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
20V |
| Current - Continuous Drain (Id) @ 25°C |
12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs |
16.7 mOhm @ 7A, 4.5V |
| Vgs(th) (Max) @ Id |
1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
69nC @ 10V |
| Vgs (Max) |
±12V |
| Input Capacitance (Ciss) (Max) @ Vds |
2180pF @ 10V |
| FET Feature |
- |
| Power Dissipation (Max) |
19W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PowerPAK® SC-70-6 Single |
| Package / Case |
PowerPAK® SC-70-6 |
| Weight |
- |
| Country of Origin |
- |
RELATED PRODUCTS FOR SIA445EDJT-T1-GE3
