SI7113DN-T1-GE3

SI7113DN-T1-GE3 - Vishay Siliconix

Part Number
SI7113DN-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET P-CH 100V 13.2A 1212-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI7113DN-T1-GE3 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
82500 pcs
Reference Price
USD 0.7392/pcs
Our Price
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SI7113DN-T1-GE3 Detailed Description

Part Number SI7113DN-T1-GE3
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 13.2A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1480pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs 134 mOhm @ 4A, 10V
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Weight -
Country of Origin -

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