SI7112DN-T1-GE3

SI7112DN-T1-GE3 - Vishay Siliconix

Part Number
SI7112DN-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 30V 11.3A 1212-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI7112DN-T1-GE3 PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
40915 pcs
Reference Price
USD 0.6453/pcs
Our Price
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SI7112DN-T1-GE3 Detailed Description

Part Number SI7112DN-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 11.3A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2610pF @ 15V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Rds On (Max) @ Id, Vgs 7.5 mOhm @ 17.8A, 10V
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Weight -
Country of Origin -

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