SI4511DY-T1-E3 Detailed Description
| Part Number |
SI4511DY-T1-E3 |
| Part Status |
Obsolete |
| FET Type |
N and P-Channel |
| FET Feature |
Logic Level Gate |
| Drain to Source Voltage (Vdss) |
20V |
| Current - Continuous Drain (Id) @ 25°C |
7.2A, 4.6A |
| Rds On (Max) @ Id, Vgs |
14.5 mOhm @ 9.6A, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds |
- |
| Power - Max |
1.1W |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package |
8-SO |
| Weight |
- |
| Country of Origin |
- |
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