| Part Number | SI4101DY-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 25.7A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 203nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 8190pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.9W (Ta), 6W (Tc) |
| Rds On (Max) @ Id, Vgs | 6 mOhm @ 15A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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SI410 | VISHAY | SI410 VISHAY TSSOP New Original Stocks | Details |
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SI4100DY | VISHAY | SI4100DY VISHAY SOP-8 New Original Stocks | Details |
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SI4100DY-T1-E3 | Vishay Siliconix | MOSFET N-CH 100V 6.8A 8-SOIC | Details |
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SI4100DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 6.8A 8-SOIC | Details |
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SI4101DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 25.7A 8SOIC | Details |
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SI4102DY-T1-E3 | Vishay Siliconix | MOSFET N-CH 100V 3.8A 8-SOIC | Details |
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SI4102DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 3.8A 8-SOIC | Details |
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SI4103DY-T1-GE3 | Vishay Siliconix | MOSFET P-CHAN 30V SO-8 | Details |
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SI4104DY-T1-E3 | Vishay Siliconix | MOSFET N-CH 100V 4.6A 8-SOIC | Details |
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SI4104DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 4.6A 8-SOIC | Details |
