| Part Number | SI4100DY-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 50V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 6W (Tc) |
| Rds On (Max) @ Id, Vgs | 63 mOhm @ 4.4A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
SI410 | VISHAY | SI410 VISHAY TSSOP New Original Stocks | Details |
|
SI4100DY | VISHAY | SI4100DY VISHAY SOP-8 New Original Stocks | Details |
|
SI4100DY-T1-E3 | Vishay Siliconix | MOSFET N-CH 100V 6.8A 8-SOIC | Details |
|
SI4100DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 6.8A 8-SOIC | Details |
|
SI4101DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 25.7A 8SOIC | Details |
|
SI4102DY-T1-E3 | Vishay Siliconix | MOSFET N-CH 100V 3.8A 8-SOIC | Details |
|
SI4102DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 3.8A 8-SOIC | Details |
|
SI4103DY-T1-GE3 | Vishay Siliconix | MOSFET P-CHAN 30V SO-8 | Details |
|
SI4104DY-T1-E3 | Vishay Siliconix | MOSFET N-CH 100V 4.6A 8-SOIC | Details |
|
SI4104DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 4.6A 8-SOIC | Details |
