SI4102DY-T1-E3 - Vishay Siliconix

Part Number	SI4102DY-T1-E3
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	3.8A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	6V, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	370pF @ 50V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	2.4W (Ta), 4.8W (Tc)
Rds On (Max) @ Id, Vgs	158 mOhm @ 2.7A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SI410	VISHAY	SI410 VISHAY TSSOP New Original Stocks	Details
SI4100DY	VISHAY	SI4100DY VISHAY SOP-8 New Original Stocks	Details
SI4100DY-T1-E3	Vishay Siliconix	MOSFET N-CH 100V 6.8A 8-SOIC	Details
SI4100DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 6.8A 8-SOIC	Details
SI4101DY-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 25.7A 8SOIC	Details
SI4102DY-T1-E3	Vishay Siliconix	MOSFET N-CH 100V 3.8A 8-SOIC	Details
SI4102DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 3.8A 8-SOIC	Details
SI4103DY-T1-GE3	Vishay Siliconix	MOSFET P-CHAN 30V SO-8	Details
SI4104DY-T1-E3	Vishay Siliconix	MOSFET N-CH 100V 4.6A 8-SOIC	Details
SI4104DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 4.6A 8-SOIC	Details