SI4058DY-T1-GE3 - Vishay Siliconix

Part Number	SI4058DY-T1-GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	26 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	690pF @ 50V
FET Feature	-
Power Dissipation (Max)	5.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SI4055-C2A-GM	Silicon Labs	TRANSMITTER RF EZRADIO PRO 20QFN	Details
SI4055-C2A-GMR	Silicon Labs	TRANSMITTER RF EZRADIO PRO 20QFN	Details
SI4056DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 11.1A 8SOIC	Details
SI4058DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 10.3A 8SOIC	Details