SI4056DY-T1-GE3 Detailed Description
Part Number |
SI4056DY-T1-GE3 |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
11.1A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V, 10V |
Vgs(th) (Max) @ Id |
2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
29.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
900pF @ 50V |
Vgs (Max) |
±20V |
FET Feature |
- |
Power Dissipation (Max) |
2.5W (Ta), 5.7W (Tc) |
Rds On (Max) @ Id, Vgs |
23 mOhm @ 15A, 10V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-SO |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Weight |
- |
Country of Origin |
- |
RELATED PRODUCTS FOR SI4056DY-T1-GE3