SI3473DDV-T1-GE3 Detailed Description
Part Number |
SI3473DDV-T1-GE3 |
Part Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
12V |
Current - Continuous Drain (Id) @ 25°C |
8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V, 4.5V |
Rds On (Max) @ Id, Vgs |
17.8 mOhm @ 8.7A, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
57nC @ 8V |
Vgs (Max) |
±8V |
Input Capacitance (Ciss) (Max) @ Vds |
1975pF @ 6V |
FET Feature |
- |
Power Dissipation (Max) |
3.6W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
6-TSOP |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Weight |
- |
Country of Origin |
- |
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