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Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Single › TPH3212PS
TPH3212PS

TPH3212PS - Transphorm

Part Number
TPH3212PS
Manufacturer
Transphorm
Brief Description
GAN FET 650V 27A TO220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TPH3212PS PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
935 pcs
Reference Price
USD 16.7/pcs
Our Price
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TPH3212PS Detailed Description

Part Number TPH3212PS
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 8V
Vgs(th) (Max) @ Id 2.6V @ 400uA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 1130pF @ 400V
Vgs (Max) ±18V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Rds On (Max) @ Id, Vgs 72 mOhm @ 17A, 8V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Weight -
Country of Origin -

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