TPW4R008NH,L1Q - Toshiba Semiconductor and Storage

Part Number	TPW4R008NH,L1Q
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	116A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	59nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	5300pF @ 40V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	800mW (Ta), 142W (Tc)
Rds On (Max) @ Id, Vgs	4 mOhm @ 50A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-DSOP Advance
Package / Case	8-PowerWDFN
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	TPW4R008NH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 80V 116A 8DSOP	Details
	TPW4R50ANH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 92A 8DSOP	Details