TPW4R008NH,L1Q

TPW4R008NH,L1Q - Toshiba Semiconductor and Storage

Part Number
TPW4R008NH,L1Q
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N-CH 80V 116A 8DSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TPW4R008NH,L1Q PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
12500 pcs
Reference Price
USD 0.8366/pcs
Our Price
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TPW4R008NH,L1Q Detailed Description

Part Number TPW4R008NH,L1Q
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 116A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 40V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 800mW (Ta), 142W (Tc)
Rds On (Max) @ Id, Vgs 4 mOhm @ 50A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-DSOP Advance
Package / Case 8-PowerWDFN
Weight -
Country of Origin -

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