TPC6012(TE85L,F,M)

TPC6012(TE85L,F,M) - Toshiba Semiconductor and Storage

Part Number
TPC6012(TE85L,F,M)
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N-CH 20V 6A VS6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TPC6012(TE85L,F,M) PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3686 pcs
Reference Price
USD 0/pcs
Our Price
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TPC6012(TE85L,F,M) Detailed Description

Part Number TPC6012(TE85L,F,M)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 630pF @ 10V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Rds On (Max) @ Id, Vgs 20 mOhm @ 3A, 4.5V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package VS-6 (2.9x2.8)
Package / Case SOT-23-6 Thin, TSOT-23-6
Weight -
Country of Origin -

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