TK9J90E,S1E

TK9J90E,S1E - Toshiba Semiconductor and Storage

Part Number
TK9J90E,S1E
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N-CH 900V TO-3PN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TK9J90E,S1E PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3412 pcs
Reference Price
USD 3.5/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for TK9J90E,S1E

TK9J90E,S1E Detailed Description

Part Number TK9J90E,S1E
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Rds On (Max) @ Id, Vgs 1.3 Ohm @ 4.5A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3
Weight -
Country of Origin -

RELATED PRODUCTS FOR TK9J90E,S1E