TK35N65W,S1F - Toshiba Semiconductor and Storage

Part Number	TK35N65W,S1F
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	35A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.5V @ 2.1mA
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	4100pF @ 300V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	270W (Tc)
Rds On (Max) @ Id, Vgs	80 mOhm @ 17.5A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3
Weight	-
Country of Origin	-

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