TK14G65W5,RQ - Toshiba Semiconductor and Storage

Part Number	TK14G65W5,RQ
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	13.7A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 300V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	130W (Tc)
Rds On (Max) @ Id, Vgs	300 mOhm @ 6.9A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight	-
Country of Origin	-

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