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Home › Product Categories › Integrated Circuits (ICs) › Memory › TC58NVG0S3HBAI4
TC58NVG0S3HBAI4

TC58NVG0S3HBAI4 - Toshiba Semiconductor and Storage

Part Number
TC58NVG0S3HBAI4
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
IC EEPROM 1GBIT 25NS 63TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TC58NVG0S3HBAI4 PDF online browsing
Datasheet PDF Download
-
Category
Memory
Delivery Time
1 Day
Date Code
New
Stock Quantity
452 pcs
Reference Price
USD 2.43/pcs
Our Price
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TC58NVG0S3HBAI4 Detailed Description

Part Number TC58NVG0S3HBAI4
Part Status Active
Memory Type Non-Volatile
Memory Format EEPROM
Technology EEPROM - NAND
Memory Size 1Gb (128M x 8)
Clock Frequency -
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Memory Interface Parallel
Voltage - Supply 2.7 V ~ 3.6 V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 63-VFBGA
Supplier Device Package 63-TFBGA (9x11)
Weight -
Country of Origin -

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