SSM6K217FE,LF

SSM6K217FE,LF - Toshiba Semiconductor and Storage

Part Number
SSM6K217FE,LF
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N-CH 40V 1.8A ES6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SSM6K217FE,LF PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
8775 pcs
Reference Price
USD 0.44/pcs
Our Price
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SSM6K217FE,LF Detailed Description

Part Number SSM6K217FE,LF
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 1.8V, 8V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.1nC @ 4.2V
Input Capacitance (Ciss) (Max) @ Vds 130pF @ 10V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Rds On (Max) @ Id, Vgs 195 mOhm @ 1A, 8V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package ES6
Package / Case SOT-563, SOT-666
Weight -
Country of Origin -

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