RN2910FE,LF(CB - Toshiba Semiconductor and Storage

Part Number	RN2910FE,LF(CB
Part Status	Active
Transistor Type	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	4.7k
Resistor - Emitter Base (R2) (Ohms)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	200MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
RN2910(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6	Details
RN2910FE,LF(CB	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6	Details
RN2910FE,LF(CT	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6	Details
RN2911(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6	Details
RN2911,LF	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6	Details
RN2911FE	TOSHIBA	RN2911FE TOSHIBA SOT363 New Original Stocks	Details
RN2911FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6	Details