HN1B04FU-GR,LF

HN1B04FU-GR,LF - Toshiba Semiconductor and Storage

Part Number
HN1B04FU-GR,LF
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS NPN/PNP 50V 0.15A US6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
HN1B04FU-GR,LF PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
448302 pcs
Reference Price
USD 0.0604/pcs
Our Price
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HN1B04FU-GR,LF Detailed Description

Part Number HN1B04FU-GR,LF
Part Status Active
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 150mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Power - Max 200mW
Frequency - Transition 150MHz
Operating Temperature 125°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Weight -
Country of Origin -

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