HN1B01FDW1T1G - ON Semiconductor

Part Number	HN1B01FDW1T1G
Part Status	Active
Transistor Type	NPN, PNP
Current - Collector (Ic) (Max)	200mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	2µA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Power - Max	380mW
Frequency - Transition	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Supplier Device Package	SC-74
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
HN1B01F-GR	TOSHIBA	HN1B01F-GR TOSHIBA SOT23-.. New Original Stocks	Details
HN1B01F-GR(TE85L,F	Toshiba Semiconductor and Storage	TRANS NPN/PNP 50V 0.15A SM6	Details
HN1B01FDW1T1	ON Semiconductor	TRANS NPN/PNP 50V 0.2A SC74	Details
HN1B01FDW1T1G	ON Semiconductor	TRANS NPN/PNP 50V 0.2A SC74	Details
HN1B01FU(T5RSONYF	TOSHIBA	HN1B01FU(T5RSONYF TOSHIBA SOT363 New Original Stocks	Details
HN1B01FU-GR	TOSHIBA	HN1B01FU-GR TOSHIBA SOT-36.. New Original Stocks	Details
HN1B01FU-GR,LF	Toshiba Semiconductor and Storage	TRANS NPN/PNP 50V 0.15A US6-PLN	Details
HN1B01FU-Y	TOSHIBA	HN1B01FU-Y TOSHIBA SOT-35.. New Original Stocks	Details
HN1B01FU-Y(L,F,T)	Toshiba Semiconductor and Storage	TRANS NPN/PNP 50V 0.15A US6	Details
HN1B04F(TE85L,F)	Toshiba Semiconductor and Storage	TRANS NPN/PNP 30V 0.5A SM6	Details