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Home › Product Categories › Discrete Semiconductor › Transistors - IGBTs - Single › GT60N321(Q)
GT60N321(Q)

GT60N321(Q) - Toshiba Semiconductor and Storage

Part Number
GT60N321(Q)
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
IGBT 1000V 60A 170W TO3P LH
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
GT60N321(Q) PDF online browsing
Datasheet PDF Download
GT60N321(Q).pdf
Category
Transistors - IGBTs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4396 pcs
Reference Price
USD 0/pcs
Our Price
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GT60N321(Q) Detailed Description

Part Number GT60N321(Q)
Part Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 1000V
Current - Collector (Ic) (Max) 60A
Current - Collector Pulsed (Icm) 120A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A
Power - Max 170W
Switching Energy -
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C 330ns/700ns
Test Condition -
Reverse Recovery Time (trr) 2.5µs
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3PL
Supplier Device Package TO-3P(LH)
Weight -
Country of Origin -

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GT60N321(Q) GT60N321(Q) Toshiba Semiconductor and Storage IGBT 1000V 60A 170W TO3P LH Details