2SD1221-Y(Q)

2SD1221-Y(Q) - Toshiba Semiconductor and Storage

Part Number
2SD1221-Y(Q)
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS NPN 60V 3A PW MOLD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2SD1221-Y(Q) PDF online browsing
Datasheet PDF Download
2SD1221-Y(Q).pdf
Category
Transistors - Bipolar (BJT) - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3829 pcs
Reference Price
USD 0/pcs
Our Price
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2SD1221-Y(Q) Detailed Description

Part Number 2SD1221-Y(Q)
Part Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 3A
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 1V @ 300mA, 3A
Current - Collector Cutoff (Max) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 5V
Power - Max 1W
Frequency - Transition 3MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PW-MOLD
Weight -
Country of Origin -

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