STH12N120K5-2 - STMicroelectronics

Part Number	STH12N120K5-2
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	44.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1370pF @ 100V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Rds On (Max) @ Id, Vgs	690 mOhm @ 6A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	H2Pak-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab) Variant
Weight	-
Country of Origin	-