EMG11T2R

EMG11T2R - Rohm Semiconductor

Part Number
EMG11T2R
Manufacturer
Rohm Semiconductor
Brief Description
TRANS 2NPN PREBIAS 0.15W EMT5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
EMG11T2R PDF online browsing
Datasheet PDF Download
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Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Delivery Time
1 Day
Date Code
New
Stock Quantity
20000 pcs
Reference Price
USD 0.0918/pcs
Our Price
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EMG11T2R Detailed Description

Part Number EMG11T2R
Part Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case 6-SMD (5 Leads), Flat Lead
Supplier Device Package EMT5
Weight -
Country of Origin -

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