NDT01N60T1G - ON Semiconductor

Part Number	NDT01N60T1G
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	400mA (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	7.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	160pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	2.5W (Tc)
Rds On (Max) @ Id, Vgs	8.5 Ohm @ 200mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223 (TO-261)
Package / Case	TO-261-4, TO-261AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
NDT014	Fairchild/ON Semiconductor	MOSFET N-CH 60V 2.7A SOT-223-4	Details
NDT014L	Fairchild/ON Semiconductor	MOSFET N-CH 60V 2.8A SOT-223	Details
NDT01N60T1G	ON Semiconductor	MOSFET N-CH 600V 0.4A SOT223	Details
NDT02N40T1G	ON Semiconductor	MOSFET N-CH 400V 0.4A SOT223	Details
NDT02N60ZT1G	ON Semiconductor	MOSFET N-CH 600V 300MA SOT223-4	Details
NDT02N60ZT3G	ON Semiconductor	MOSFET N-CH 600V 300MA SOT223-4	Details
NDT03N40ZT1G	ON Semiconductor	MOSFET N-CH 400V 0.5A SOT223-4	Details
NDT03N40ZT3G	ON Semiconductor	MOSFET N-CH 400V 0.5A SOT223-4	Details