IRF530N_R4942 - ON Semiconductor

Part Number	IRF530N_R4942
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	64 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	52nC @ 20V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 25V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IRF530	STMicroelectronics	MOSFET N-CH 100V 14A TO-220	Details
IRF5305	IR	IRF5305 IR TO-220 New Original Stocks	Details
IRF5305L	Infineon Technologies	MOSFET P-CH 55V 31A TO-262	Details
IRF5305LPBF	Infineon Technologies	MOSFET P-CH 55V 31A TO-262	Details
IRF5305PBF	Infineon Technologies	MOSFET P-CH 55V 31A TO-220AB	Details
IRF5305S	IR	IRF5305S IR TO-263 New Original Stocks	Details
IRF5305SPBF	Infineon Technologies	MOSFET P-CH 55V 31A D2PAK	Details
IRF5305ST	IR	IRF5305ST IR TO-263 New Original Stocks	Details
IRF5305STRL	IOR	IRF5305STRL IOR D2PARK New Original Stocks	Details
IRF5305STRLPBF	Infineon Technologies	MOSFET P-CH 55V 31A D2PAK	Details