PSMN4R1-60YLX - Nexperia USA Inc.

Part Number	PSMN4R1-60YLX
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	4.1 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	103nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7853pF @ 25V
FET Feature	-
Power Dissipation (Max)	238W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56, Power-SO8
Package / Case	SC-100, SOT-669
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
PSMN4R0-25YLC,115	Nexperia USA Inc.	MOSFET N-CH 25V 84A LFPAK	Details
PSMN4R0-30YL	NXP	PSMN4R0-30YL NXP SOP669 New Original Stocks	Details
PSMN4R0-30YL,115	Nexperia USA Inc.	MOSFET N-CH 30V 100A LFPAK	Details
PSMN4R0-30YLDX	Nexperia USA Inc.	MOSFET N-CH 30V 95A LFPAK	Details
PSMN4R0-40YS,115	Nexperia USA Inc.	MOSFET N-CH 40V 100A LFPAK	Details
PSMN4R0-60YS,115	Nexperia USA Inc.	MOSFET N-CH 60V 74A LFPAK	Details
PSMN4R1-30YLC,115	Nexperia USA Inc.	MOSFET N-CH 30V 90A LFPAK	Details
PSMN4R1-60YLX	Nexperia USA Inc.	MOSFET N-CH 60V 100A LFPAK56	Details
PSMN4R2-30MLDX	Nexperia USA Inc.	MOSFET N-CH 30V 70A LFPAK33	Details
PSMN4R2-60PLQ	Nexperia USA Inc.	MOSFET N-CH 60V 130A TO-220	Details