PHD101NQ03LT,118 - Nexperia USA Inc.

Part Number	PHD101NQ03LT,118
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	5V, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	2180pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	166W (Tc)
Rds On (Max) @ Id, Vgs	5.5 mOhm @ 25A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	PHD101NQ03LT	PHILIPS	PHD101NQ03LT PHILIPS SOT428.. New Original Stocks	Details
	PHD101NQ03LT,118	Nexperia USA Inc.	MOSFET N-CH 30V 75A DPAK	Details