APTDC902U601G - Microsemi Corporation

Part Number	APTDC902U601G
Part Status	Obsolete
Diode Configuration	2 Independent
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io) (per Diode)	90A
Voltage - Forward (Vf) (Max) @ If	1.8V @ 90A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	1800µA @ 600V
Operating Temperature - Junction	-40°C ~ 175°C
Mounting Type	Chassis Mount
Package / Case	SP1
Supplier Device Package	SP1
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
APTDC10H601G	Microsemi Corporation	RECT BRIDGE 10A 600V SP1	Details
APTDC20H1201G	Microsemi Corporation	RECT BRIDGE 20A 1200V SP1	Details
APTDC20H601G	Microsemi Corporation	RECT BRIDGE 20A 600V SP1	Details
APTDC40H1201G	Microsemi Corporation	POWER MODULE DIODE 1200V 40A SP1	Details
APTDC40H601G	Microsemi Corporation	POWER MODULE DIODE 600V 40A SP1	Details
APTDC902U601G	Microsemi Corporation	DIODE MODULE 600V 90A SP1	Details