APT44GA60B - Microsemi Corporation

Part Number	APT44GA60B
Part Status	Active
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	78A
Current - Collector Pulsed (Icm)	130A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 26A
Power - Max	337W
Switching Energy	409µJ (on), 258µJ (off)
Input Type	Standard
Gate Charge	128nC
Td (on/off) @ 25°C	16ns/84ns
Test Condition	400V, 26A, 4.7 Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 [B]
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
APT4012BVR	Microsemi Corporation	MOSFET N-CH 400V 37A TO247AD	Details
APT4012BVRG	Microsemi Corporation	MOSFET N-CH 400V 37A TO247AD	Details
APT4016BVRG	Microsemi Corporation	MOSFET N-CH 400V TO-247	Details
APT4065BNG	Microsemi Corporation	MOSFET N-CH 400V 11A TO247AD	Details
APT40DC120HJ	Microsemi Corporation	RECT BRIDGE 40A 1200V SOT227	Details
APT40DC60HJ	Microsemi Corporation	RECT BRIDGE 40A 600V SOT227	Details
APT40DQ100BCTG	Microsemi Corporation	DIODE ARRAY GP 1000V 40A TO247	Details
APT40DQ100BG	Microsemi Corporation	DIODE GEN PURP 1KV 40A TO247	Details
APT40DQ120BCTG	Microsemi Corporation	DIODE ARRAY GP 1200V 40A TO247	Details
APT40DQ120BG	Microsemi Corporation	DIODE GEN PURP 1.2KV 40A TO247	Details