APT4065BNG - Microsemi Corporation

Part Number	APT4065BNG
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	950pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	180W (Tc)
Rds On (Max) @ Id, Vgs	650 mOhm @ 5.5A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AD
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
APT4012BVR	Microsemi Corporation	MOSFET N-CH 400V 37A TO247AD	Details
APT4012BVRG	Microsemi Corporation	MOSFET N-CH 400V 37A TO247AD	Details
APT4016BVRG	Microsemi Corporation	MOSFET N-CH 400V TO-247	Details
APT4065BNG	Microsemi Corporation	MOSFET N-CH 400V 11A TO247AD	Details
APT40DC120HJ	Microsemi Corporation	RECT BRIDGE 40A 1200V SOT227	Details
APT40DC60HJ	Microsemi Corporation	RECT BRIDGE 40A 600V SOT227	Details
APT40DQ100BCTG	Microsemi Corporation	DIODE ARRAY GP 1000V 40A TO247	Details
APT40DQ100BG	Microsemi Corporation	DIODE GEN PURP 1KV 40A TO247	Details
APT40DQ120BCTG	Microsemi Corporation	DIODE ARRAY GP 1200V 40A TO247	Details
APT40DQ120BG	Microsemi Corporation	DIODE GEN PURP 1.2KV 40A TO247	Details