APT150GT120JR - Microsemi Corporation

Part Number	APT150GT120JR
Part Status	Active
IGBT Type	NPT
Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	170A
Power - Max	830W
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 150A
Current - Collector Cutoff (Max)	150µA
Input Capacitance (Cies) @ Vce	9.3nF @ 25V
Input	Standard
NTC Thermistor	No
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	ISOTOP
Supplier Device Package	ISOTOP®
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
APT150GN120J	Microsemi Corporation	IGBT 1200V 215A 625W SOT227	Details
APT150GN120JDQ4	Microsemi Corporation	IGBT 1200V 215A 625W SOT227	Details
APT150GN60B2G	Microsemi Corporation	IGBT 600V 220A 536W SOT227	Details
APT150GN60J	Microsemi Corporation	IGBT 600V 220A 536W SOT227	Details
APT150GN60JDQ4	Microsemi Corporation	IGBT 600V 220A 536W SOT227	Details
APT150GN60LDQ4G	Microsemi Corporation	IGBT 600V 220A 536W TO-264L	Details
APT150GT120JR	Microsemi Corporation	IGBT 1200V 170A 830W SOT227	Details
APT15D100BCTG	Microsemi Corporation	DIODE ARRAY GP 1000V 15A TO247	Details
APT15D100BG	Microsemi Corporation	DIODE GEN PURP 1KV 15A TO247	Details
APT15D100BHBG	Microsemi Corporation	DIODE ARRAY GP 1000V 15A TO247	Details