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Home › Product Categories › Discrete Semiconductor › Transistors - IGBTs - Modules › APT100GT120JRDQ4
APT100GT120JRDQ4

APT100GT120JRDQ4 - Microsemi Corporation

Part Number
APT100GT120JRDQ4
Manufacturer
Microsemi Corporation
Brief Description
IGBT 1200V 123A 570W SOT227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
APT100GT120JRDQ4 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Modules
Delivery Time
1 Day
Date Code
New
Stock Quantity
280 pcs
Reference Price
USD 52.52/pcs
Our Price
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APT100GT120JRDQ4 Detailed Description

Part Number APT100GT120JRDQ4
Part Status Active
IGBT Type NPT
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 123A
Power - Max 570W
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 100A
Current - Collector Cutoff (Max) 200µA
Input Capacitance (Cies) @ Vce 7.85nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case ISOTOP
Supplier Device Package ISOTOP®
Weight -
Country of Origin -

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