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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Single › 2N5012S
2N5012S

2N5012S - Microsemi Corporation

Part Number
2N5012S
Manufacturer
Microsemi Corporation
Brief Description
TRANSISTOR NPN TO-39
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2N5012S PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
54997 pcs
Reference Price
USD 0/pcs
Our Price
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2N5012S Detailed Description

Part Number 2N5012S
Part Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 700V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 5mA, 25mA
Current - Collector Cutoff (Max) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 25mA, 10V
Power - Max 1W
Frequency - Transition -
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39 (TO-205AD)
Weight -
Country of Origin -

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