| Part Number | MT47H512M4THN-25E:M |
|---|---|
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 2Gb (512M x 4) |
| Clock Frequency | 400MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 400ps |
| Memory Interface | Parallel |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
MT47H512M4EB-187E:C | Micron Technology Inc. | IC SDRAM 2GBIT 533MHZ 60FBGA | Details |
|
MT47H512M4EB-25E:C | Micron Technology Inc. | IC SDRAM 2GBIT 400MHZ 60FBGA | Details |
|
MT47H512M4EB-25E:C TR | Micron Technology Inc. | IC SDRAM 2GBIT 400MHZ 60FBGA | Details |
|
MT47H512M4EB-3:C | Micron Technology Inc. | IC SDRAM 2GBIT 333MHZ 60FBGA | Details |
|
MT47H512M4THN-25E:H | Micron Technology Inc. | IC SDRAM 2GBIT 400MHZ 63FBGA | Details |
|
MT47H512M4THN-25E:M | Micron Technology Inc. | IC DRAM 2G PARALLEL 400MHZ | Details |
|
MT47H512M4THN-25E:M TR | Micron Technology Inc. | IC SDRAM 2GBIT 400MHZ 63FBGA | Details |
 |
MT47H512M4THN-37E:E TR | Micron Technology Inc. | IC SDRAM 2GBIT 266MHZ 63FBGA | Details |
|
MT47H512M4THN-3:E TR | Micron Technology Inc. | IC SDRAM 2GBIT 333MHZ 63FBGA | Details |
|
MT47H512M4THN-3:H | Micron Technology Inc. | IC SDRAM 2GBIT 333MHZ 63FBGA | Details |
