IXTP2N100P

IXTP2N100P - IXYS

Part Number
IXTP2N100P
Manufacturer
IXYS
Brief Description
MOSFET N-CH 1000V 2A TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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IXTP2N100P PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
11450 pcs
Reference Price
USD 2.3376/pcs
Our Price
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IXTP2N100P Detailed Description

Part Number IXTP2N100P
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 24.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 655pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 86W (Tc)
Rds On (Max) @ Id, Vgs 7.5 Ohm @ 500mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Weight -
Country of Origin -

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