IXTN660N04T4 - IXYS

Part Number	IXTN660N04T4
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	660A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	860nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	44000pF @ 25V
Vgs (Max)	±15V
FET Feature	Current Sensing
Power Dissipation (Max)	1040W (Tc)
Rds On (Max) @ Id, Vgs	0.85 mOhm @ 100A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227B
Package / Case	SOT-227-4, miniBLOC
Weight	-
Country of Origin	-

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